QNTEK Labs
PRODUCT SPECS
QRAM — Ribbon Microphone Reimagined

QRAM

A multi‑domain sensing cartridge: three ribbons (optic • piezo • semiconductor) sandwich two parabolic‑well membranes that house spin‑coupled quantum‑dot lattices on both faces. Optics are run detuned & low‑duty with a photonic kill‑switch; membranes remain isolation homes only.

45–70 ns
Effective coherence (RT, upkeep strong)
8–12×
Conditioned SNR vs CCS (RT)
0.5–5 µs
Coherence at cryo (with upkeep)
6.6×
Relative SNR vs CCS (FIG.4 · Ti)

Key benefits

  • Non‑invasive readout — membranes are never probed; all sensing is dispersive via ribbons.
  • Heralded upkeep — detuned probe packets + micro‑trims extend usable windows without collapse.
  • Optical kill‑switch — tunable evanescent overlap (≈5% → <1%) preserves passive lifetime.
  • Modular cartridges — serviceable ribbon heads; drop‑in upgrades for optics/piezo/semiconductor.
  • Cross‑domain gain — cones + parabolic wells funnel photons and amplify mount‑level motion.
  • Balanced stack (FIG.4 · Ti) — best overall SNR; vacuum‑clean and mechanically robust.
  • Multiple SKUs — NiTi (fatigue‑proof), ITO/Graphene (optics‑heavy), Flex Cu/PI (routing‑easy).
  • Dark‑mode bias — lattice spacing favors subradiant modes for longer passive coherence.
  • Backaction‑evading mechanics — strain node at membranes with two‑tone piezo drive.

Core performance (acceptance targets)

MetricTargetNotes
Effective coherence (RT, upkeep strong)45–70 nsHeralded upkeep; detuned optics; ΔT_mem < 20 mK
Effective coherence (RT, no upkeep)10–15 nsOptics present, low‑duty idle
Effective coherence (cryo + upkeep)0.5–5 µsOptional validation tier
Relative SNR vs CCS≥ 6.5×FIG.4 · Ti build, balanced optical/mech/electrical gains
Detuned probe regime|Δ| = 30–60 meVFlip sign for dispersive control
Evanescent overlap at membranes1–2% (idle), up to 5% (brief upkeep)Photonic kill‑switch engaged
Upkeep packet width / rate1–5 ns @ 10–50 kHzMean photons per packet \u0304n ≈ 0.1–0.5
Trim limits per cycleStark ≤ 1 meV; strain ≤ 0.5 µεApplied via ribbons/anchors only

Architecture & materials

Stack (top → bottom)

  • Optic ribbon (waveguide + cones) with adjustable overlap
  • Membrane A — parabolic wells; dots on both faces (isolation home)
  • Piezo ribbon — backaction‑evading two‑tone; strain node at membranes
  • Membrane B — parabolic wells; dots on both faces (isolation home)
  • Semiconductor ribbon — field‑effect phase proxy; guard rings; no DC into membranes

Membranes: SiN / h‑BN / SiC (50–200 nm). Dots: giant‑shell CdSe/CdS or InP/ZnSeS with ALD Al₂O₃ cap (2–5 nm).

Recommended ribbon build (FIG.4 · Ti)

  • SiN cap (150 nm) with parabolic wells
  • ALD Al₂O₃ spacer (20–30 nm) — anti‑quench & isolation
  • Titanium backbone (≈10 µm) — flexible, vacuum‑clean, conductive
  • Perimeter guard ring; trace keep‑out under well field
Alternatives: NiTi (superelastic), ITO/Graphene hybrid (optical throughput), Flex Cu/PI (routing‑heavy).

Configurations

  • Groups per ribbon (G): 8 / 16 / 24 standard: G16
  • Dots per quadrant (N): 2 or 4 standard: N2 (even only)
  • Optics: PAC‑O cones + windows; µLED/PD timing ready
  • Tuning bins: H0/H1 (cone height), W0/W1 (well depth)

I/O & control (Plug‑and‑Play Integration Profile)

Optical

  • Grating or fiber I/O; heterodyne LO input
  • Detuned probe packets (1–5 ns); herald tap (90/10) to SPAD/SNSPD
  • Photonic kill‑switch to set overlap 5% → <1%

Mechanical

  • Two‑tone BAE drive (mounts); interferometric quadrature readout
  • Phononic bandgap clamps; strain node at membranes

Electrical

  • Field‑effect phase channel on semiconductor ribbon; guard rings
  • Stark trim DAC (AC‑coupled) — ≤ 1 meV per upkeep cycle
  • Star‑ground away from dot well region; leakage < pA

Controller No customer software

  • Sealed hardware loop (analog/FPGA state machine); TTL/analog I/O only
  • Front‑panel toggles: Detune ±, Power ½, Scramble, Upkeep On/Off
  • No drivers or PC app required; logging optional via scope/time‑tagger

Harness & Adapters (Universal Wiring)

Universal harness on the ASU with swappable adapter tails so labs can use BNC/SMA/SHV/banana without custom wiring. Shields follow a star‑ground; membranes remain isolated.

Main control connector — Micro‑D 25 (QNH‑25)

PinNameType / LevelNotes
1GND_DIG0 VDigital return
2+5V_AUX+5 V, 0.5 AAccessory power (fused)
3+12V_AUX+12 V, 0.5 AAccessory power (fused)
4TRIG_INTTL 3–5 VExternal packet trigger
5HERALD_TTLTTL 3–5 VFrom SPAD/APD discriminator
6GATE_OUTTTL 3–5 VOpens 20–50 ns read/trim gate
7DETUNE_SELTTLDetuning sign flip (+/−Δ)
8SCRAMBLE_ENTTLFake‑herald control
9UPKEEP_ENTTLEnable upkeep loop
10KILL_ENTTLPhotonic kill‑switch actuator
11STARK_SET0–5 VStark trim setpoint (AC‑coupled)
12STARK_SENSE0–5 VMonitor
13PIEZO_TRIM0–10 VMount micro‑strain bias
14PIEZO_SENSE0–10 VMonitor
15REF_CLK_IN3.3 V CMOS10 MHz reference
16REF_CLK_OUT3.3 V CMOS10 MHz out
17SDAServiceFactory‑only
18SCLServiceFactory‑only
19GND_ANA0 VAnalog return
20CHASSIS_GNDChassisBond to shell at ASU only
21ID0StrapAdapter ID
22ID1StrapAdapter ID
23RSV1Reserved
24RSV2Reserved
25SHIELDConnector shell

RF & HV breakouts

PortConnectorSpecPurpose
LO_INSMA‑F50 Ω, 0 dBmHeterodyne local oscillator
EOM_DRIVESMA‑F50 Ω, up to +20 dBmProbe packet modulation
PD_PHASESMA‑F50 ΩBalanced PD → mixer (phase)
DITHER_REFSMA‑F50 ΩPiezo dither reference
PIEZO_HVSHV±200 V maxMount actuator HV

Power

  • Mini‑XLR‑4 24 VDC input (≤ 90 W). Pin‑1 GND, Pin‑4 +24 V. Internal rails: ±12 V, +5 V.
  • Reverse‑polarity & surge protection onboard.

Adapter kits (pigtails)

  • QNH‑BNC‑6: QNH‑25 → 6× BNC male (TRIG, HERALD, GATE, DETUNE, STARK, PIEZO_TRIM).
  • QNRF‑SMA‑4: 4× SMA patch leads (LO, EOM, PD_PHASE, DITHER).
  • QNHV‑SHV‑2: SHV male ↔ male HV lead (2 m, 5 kV rating).
  • QNPWR‑MXLR: 24 VDC supply → mini‑XLR‑4 cable.
  • ID straps: jumpers set ID0/ID1 so the unit auto‑scales ranges.

Shielding: braided overall shield to CHASSIS_GND at ASU (star ground). Coax shields both ends. TVS on externals. Membrane region remains floating.

QNTEK Labs Inc.